30V,Drain to Source Voltage (Vdss)
850mW,Power - Max
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMG6601LVT-7 DIODES INC
N and P-Channel 30V 3.8A, 2.5A 55 mOhm @ 3.4A, 10V 1.5V @ 250µA 12.3nC @ 10V 422pF @ 15V 850mW Surface Mount SOT-23-6 Thin, TSOT-23-6
NTTFS4932NTAG ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 11A (Ta), 79A (Tc) 4 mOhm @ 20A, 10V 2.2V @ 250µA 46.5nC @ 10V 3111pF @ 15V 850mW Surface Mount 8-WDFN Exposed Pad
NTTFS4939NTAG ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 8.9A (Ta), 52A (Tc) 5.5 mOhm @ 20A, 10V 2.2V @ 250µA 28nC @ 10V 1979pF @ 15V 850mW Surface Mount 8-WDFN Exposed Pad
NTTFS4932NTWG ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 11A (Ta), 79A (Tc) 4 mOhm @ 20A, 10V 2.2V @ 250µA 46.5nC @ 10V 3111pF @ 15V 850mW Surface Mount 8-WDFN Exposed Pad
NTTFS4939NTWG ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 8.9A (Ta), 52A (Tc) 5.5 mOhm @ 20A, 10V 2.2V @ 250µA 28nC @ 10V 1979pF @ 15V 850mW Surface Mount 8-WDFN Exposed Pad
NTMS4705NR2G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 7.4A (Ta) 10 mOhm @ 12A, 10V 3V @ 250µA 18nC @ 4.5V 1078pF @ 24V 850mW Surface Mount 8-SOIC (0.154", 3.90mm Width)