30V,Drain to Source Voltage (Vdss)
34nC @ 10V,Gate Charge (Qg) @ Vgs
42W,Power - Max
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
TPN2R203NC,L1Q TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 45A (Tc) 2.2 mOhm @ 22.5A, 10V 2.3V @ 500µA 34nC @ 10V 2230pF @ 15V 42W Surface Mount 8-PowerVDFN
TPCA8062-H,LQ(CM TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 28A (Ta) 5.6 mOhm @ 14A, 10V 2.3V @ 300µA 34nC @ 10V 2900pF @ 10V 42W Surface Mount 8-PowerVDFN