30V,Drain to Source Voltage (Vdss)
15nC @ 10V,Gate Charge (Qg) @ Vgs
42W,Power - Max
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IPD090N03L G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 40A (Tc) 9 mOhm @ 30A, 10V 2.2V @ 250µA 15nC @ 10V 1600pF @ 15V 42W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IPB096N03L G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 35A (Tc) 9.6 mOhm @ 30A, 10V 2.2V @ 250µA 15nC @ 10V 1600pF @ 15V 42W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPS090N03L G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 40A (Tc) 9 mOhm @ 30A, 10V 2.2V @ 250µA 15nC @ 10V 1600pF @ 15V 42W Through Hole TO-251-3 Short Leads, IPak, TO-251AA
IPP096N03L G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 35A (Tc) 9.6 mOhm @ 30A, 10V 2.2V @ 250µA 15nC @ 10V 1600pF @ 15V 42W Through Hole TO-220-3
IPU090N03L G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 40A (Tc) 9 mOhm @ 30A, 10V 2.2V @ 250µA 15nC @ 10V 1600pF @ 15V 42W Through Hole TO-251-3 Long Leads, IPak, TO-251AB
PSMN8R0-30YLC,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 54A (Tmb) 7.9 mOhm @ 15A, 10V 1.95V @ 1mA 15nC @ 10V 848pF @ 15V 42W Surface Mount SC-100, SOT-669, 4-LFPAK