| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BSC886N03LS G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 30V | 65A | 6 mOhm @ 30A, 10V | 2.2V @ 250µA | 26nC @ 10V | 2100pF @ 15V | 39W | Surface Mount | 8-PowerTDFN | |
| TK45P03M1,RQ(S | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 30V | 45A (Ta) | 9.7 mOhm @ 22.5A, 10V | 2.3V @ 200µA | 25nC @ 10V | 1500pF @ 10V | 39W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| TPCC8073,LQ(O | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 30V | 27A (Ta) | 4.5 mOhm @ 13.5A, 10V | 2.3V @ 300µA | 37nC @ 10V | 2600pF @ 10V | 39W | Surface Mount | 8-PowerVDFN | |
| SISA10DN-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 25A (Ta), 30A (Tc) | 3.7 mOhm @ 10A, 10V | 2.2V @ 250µA | 51nC @ 10V | 2425pF @ 15V | 39W | Surface Mount | PowerPAK® 1212-8 | |
| SI7114ADN-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 35A | 7.5 mOhm @ 18A, 10V | 2.5V @ 250µA | 32nC @ 10V | 1230pF @ 15V | 39W | Surface Mount | PowerPAK® 1212-8 | |
| SISA12DN-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 25A (Ta), 30A (Tc) | 3.7 mOhm @ 10A, 10V | 2.2V @ 250µA | 51nC @ 10V | 2425pF @ 15V | 39W | Surface Mount | PowerPAK® 1212-8 |
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