30V,Drain to Source Voltage (Vdss)
3.1W,Power - Max
8-TDFN Exposed Pad,Package / Case
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
GKI03080 SANKEN ELECTRIC CO LTD
MOSFET N-Channel, Metal Oxide 30V 12A (Ta) 8.2 mOhm @ 25A, 10V 2.5V @ 250µA 16.3nC @ 10V 1030pF @ 15V 3.1W Surface Mount 8-TDFN Exposed Pad
GKI03061 SANKEN ELECTRIC CO LTD
MOSFET N-Channel, Metal Oxide 30V 14A (Ta) 6.2 mOhm @ 31A, 10V 2.5V @ 350µA 24.6nC @ 10V 1480pF @ 15V 3.1W Surface Mount 8-TDFN Exposed Pad
GKI03039 SANKEN ELECTRIC CO LTD
MOSFET N-Channel, Metal Oxide 30V 18A (Ta) 3.8 mOhm @ 47.2A, 10V 2.5V @ 650µA 38.8nC @ 10V 2460pF @ 15V 3.1W Surface Mount 8-TDFN Exposed Pad
GKI03026 SANKEN ELECTRIC CO LTD
MOSFET N-Channel, Metal Oxide 30V 22A (Ta) 2.6 mOhm @ 68A, 10V 2.5V @ 1mA 64nC @ 10V 4010pF @ 15V 3.1W Surface Mount 8-TDFN Exposed Pad
CSD17556Q5B TEXAS INSTRUMENTS INC
MOSFET N-Channel, Metal Oxide 30V 34A (Ta), 100A (Tc) 1.4 mOhm @ 40A, 10V 1.65V @ 250µA 39nC @ 4.5V 7020pF @ 15V 3.1W Surface Mount 8-TDFN Exposed Pad