30V,Drain to Source Voltage (Vdss)
236mW,Power - Max
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI1071X-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 960mA (Ta) 167 mOhm @ 960mA, 10V 1.45V @ 250µA 6.64nC @ 4.5V 315pF @ 15V 236mW Surface Mount SOT-563, SOT-666
SI1073X-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 980mA (Ta) 173 mOhm @ 980mA, 10V 3V @ 250µA 9.45nC @ 10V 265pF @ 15V 236mW Surface Mount SOT-563, SOT-666
SI1070X-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 1.2A (Ta) 99 mOhm @ 1.2A, 4.5V 1.55V @ 250µA 8.3nC @ 5V 385pF @ 15V 236mW Surface Mount SOT-563, SOT-666
SI1072X-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 1.3A (Ta) 93 mOhm @ 1.3A, 10V 3V @ 250µA 8.3nC @ 10V 280pF @ 15V 236mW Surface Mount SOT-563, SOT-666
SI1070X-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 1.2A (Ta) 99 mOhm @ 1.2A, 4.5V 1.55V @ 250µA 8.3nC @ 5V 385pF @ 15V 236mW Surface Mount SOT-563, SOT-666
SI1071X-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 960mA (Ta) 167 mOhm @ 960mA, 10V 1.45V @ 250µA 6.64nC @ 4.5V 315pF @ 15V 236mW Surface Mount SOT-563, SOT-666
SI1072X-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 1.3A (Ta) 93 mOhm @ 1.3A, 10V 3V @ 250µA 8.3nC @ 10V 280pF @ 15V 236mW Surface Mount SOT-563, SOT-666