| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| UPA2812T1L-E2-AT | RENESAS ELECTRONICS CORP | MOSFET P-Channel, Metal Oxide | 30V | 30A | 4.8 mOhm @ 30A, 10V | - | 100nC @ 10V | 3740pF @ 10V | 1.5W | Surface Mount | 8-PowerVDFN | |
| SI4425BDY-T1-E3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 8.8A (Ta) | 12 mOhm @ 11.4A, 10V | 3V @ 250µA | 100nC @ 10V | - | 1.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI4425BDY-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 8.8A (Ta) | 12 mOhm @ 11.4A, 10V | 3V @ 250µA | 100nC @ 10V | - | 1.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
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