30V,Drain to Source Voltage (Vdss)
11.4 mOhm @ 6A, 10V,Rds On (Max) @ Id, Vgs
-,Power - Max
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
TPC8038-H(TE12L,Q) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 12A (Ta) 11.4 mOhm @ 6A, 10V 2.5V @ 1mA 21nC @ 10V 2150pF @ 10V - Surface Mount 8-SOIC (0.173", 4.40mm Width)
TPC8037-H(TE12L,Q) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 12A (Ta) 11.4 mOhm @ 6A, 10V 2.5V @ 1mA 21nC @ 10V 2150pF @ 10V - Surface Mount 8-SOIC (0.173", 4.40mm Width)