Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|
RJK03H1DPA-00#J5A | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 30V | 45A | 2.4 mOhm @ 22.5A, 8V | - | 40nC @ 4.5V | 7420pF @ 10V | 45W | Surface Mount | 8-WFDFN Exposed Pad | |
TPCA8120,LQ(CM | TOSHIBA CORP | MOSFET P-Channel, Metal Oxide | 30V | 45A (Ta) | 3 mOhm @ 22.5A, 10V | 2V @ 1mA | 190nC @ 10V | 7420pF @ 10V | 45W | Surface Mount | 8-PowerVDFN | |
TPC8120(TE12L,Q,M) | TOSHIBA CORP | MOSFET P-Channel, Metal Oxide | 30V | 18A (Ta) | 3.2 mOhm @ 9A, 10V | 2V @ 1mA | 180nC @ 10V | 7420pF @ 10V | - | Surface Mount | 8-SOIC (0.173", 4.40mm Width) |