30V,Drain to Source Voltage (Vdss)
435pF @ 15V,Input Capacitance (Ciss) @ Vds
10 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDFMA3P029Z FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 30V 3.3A (Ta) 87 mOhm @ 3.3A, 10V 3V @ 250µA 10nC @ 10V 435pF @ 15V 700mW Surface Mount 6-WDFN Exposed Pad
FDMA3027PZ FAIRCHILD SEMICONDUCTOR CORP
2 P-Channel (Dual) 30V 3.3A 87 mOhm @ 3.3A, 10V 3V @ 250µA 10nC @ 10V 435pF @ 15V 700mW Surface Mount 6-WDFN Exposed Pad
SI4128DY-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 10.9A 24 mOhm @ 7.8A, 10V 2.5V @ 250µA 12nC @ 10V 435pF @ 15V 5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI5468DC-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 6A (Tc) 28 mOhm @ 6.8A, 10V 2.5V @ 250µA 12nC @ 10V 435pF @ 15V 5.7W Surface Mount 8-SMD, Flat Lead
SIS412DN-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 12A (Tc) 24 mOhm @ 7.8A, 10V 2.5V @ 250µA 12nC @ 10V 435pF @ 15V 15.6W Surface Mount PowerPAK® 1212-8
SI4128DY-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 10.9A 24 mOhm @ 7.8A, 10V 2.5V @ 250µA 12nC @ 10V 435pF @ 15V 5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SIZ704DT-T1-GE3 VISHAY SILICONIX
2 N-Channel (Dual) Asymmetrical 30V 12A, 16A 24 mOhm @ 7.8A, 10V 2.5V @ 250µA 12nC @ 10V 435pF @ 15V 20W, 30W Surface Mount -
SIZ904DT-T1-GE3 VISHAY SILICONIX
2 N-Channel (Dual) Asymmetrical 30V 12A, 16A 24 mOhm @ 7.8A, 10V 2.5V @ 250µA 12nC @ 10V 435pF @ 15V 20W, 33W Surface Mount -
SI5511DC-T1-E3 VISHAY SILICONIX
N and P-Channel 30V 4A, 2.3A 55 mOhm @ 4.8A, 4.5V 2V @ 250µA 7.1nC @ 5V 435pF @ 15V 2.1W, 1.3W Surface Mount 8-SMD, Flat Lead
SI5511DC-T1-GE3 VISHAY SILICONIX
N and P-Channel 30V 4A, 3.6A 55 mOhm @ 4.8A, 4.5V 2V @ 250µA 7.1nC @ 5V 435pF @ 15V 3.1W, 2.6W Surface Mount 8-SMD, Flat Lead