30V,Drain to Source Voltage (Vdss)
280pF @ 15V,Input Capacitance (Ciss) @ Vds
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SSM6N55NU,LF TOSHIBA CORP
2 N-Channel (Dual) 30V 4A 46 mOhm @ 4A, 10V 2.5V @ 100µA 2.5nC @ 4.5V 280pF @ 15V 1W Surface Mount 6-WDFN Exposed Pad
SSM3J306T(TE85L,F) TOSHIBA CORP
MOSFET P-Channel, Metal Oxide 30V 2.4A (Ta) 117 mOhm @ 1A, 10V - 2.5nC @ 15V 280pF @ 15V 700mW Surface Mount TO-236-3, SC-59, SOT-23-3
SSM3J334R,LF TOSHIBA CORP
MOSFET P-Channel, Metal Oxide 30V 4A (Ta) 71 mOhm @ 3A, 10V 2V @ 100µA 5.9nC @ 10V 280pF @ 15V 1W Surface Mount SOT-23-3 Flat Leads
SSM3J117TU(TE85L) TOSHIBA CORP
MOSFET P-Channel, Metal Oxide 30V 2A (Ta) 117 mOhm @ 1A, 10V 2.6V @ 1mA - 280pF @ 15V 500mW Surface Mount 3-SMD, Flat Leads
SI1072X-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 1.3A (Ta) 93 mOhm @ 1.3A, 10V 3V @ 250µA 8.3nC @ 10V 280pF @ 15V 236mW Surface Mount SOT-563, SOT-666
SI1072X-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 1.3A (Ta) 93 mOhm @ 1.3A, 10V 3V @ 250µA 8.3nC @ 10V 280pF @ 15V 236mW Surface Mount SOT-563, SOT-666