30V,Drain to Source Voltage (Vdss)
1600pF @ 10V,Input Capacitance (Ciss) @ Vds
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
RJK0364DPA-00#J0 RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 30V 35A (Ta) 7.8 mOhm @ 17.5A, 10V - 10nC @ 4.5V 1600pF @ 10V 35W Surface Mount 8-WDFN Exposed Pad
RJK0364DPA-02#J0B RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 30V 35A 7.1 mOhm @ 17.5A, 10V - 10nC @ 4.5V 1600pF @ 10V 35W Surface Mount 8-WFDFN Exposed Pad
TPCC8008(TE12L,QM) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 25A (Ta) 6.8 mOhm @ 12.5A, 10V 2.5V @ 1A 30nC @ 10V 1600pF @ 10V 30W Surface Mount 8-VDFN Exposed Pad
TPCC8103(TE12L,QM) TOSHIBA CORP
MOSFET P-Channel, Metal Oxide 30V 18A (Ta) 12 mOhm @ 9A, 10V 2V @ 1mA 38nC @ 10V 1600pF @ 10V 27W Surface Mount 8-VDFN Exposed Pad
TPCC8008(TE12L,Q) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 25A (Ta) 6.8 mOhm @ 12.5A, 10V 2.5V @ 1A 30nC @ 10V 1600pF @ 10V 30W Surface Mount 8-PowerVDFN
TPCC8103(TE12L,Q) TOSHIBA CORP
MOSFET P-Channel, Metal Oxide 30V 18A (Ta) 12 mOhm @ 9A, 10V 2V @ 1mA 38nC @ 10V 1600pF @ 10V 27W Surface Mount 8-PowerVDFN
TPCA8065-H,LQ(S TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 16A (Ta) 11.4 mOhm @ 8A, 10V 2.3V @ 200µA 20nC @ 10V 1600pF @ 10V 25W Surface Mount 8-PowerVDFN