SI4890BDY-T1-GE3 |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
30V
|
10.7A (Ta), 16A (Tc)
|
12 mOhm @ 10A, 10V
|
2.6V @ 250µA
|
33nC @ 10V
|
1535pF @ 15V
|
5.7W
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|
SI4890BDY-T1-E3 |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
30V
|
10.7A (Ta), 16A (Tc)
|
12 mOhm @ 10A, 10V
|
2.6V @ 250µA
|
33nC @ 10V
|
1535pF @ 15V
|
5.7W
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|
SI4618DY-T1-E3 |
VISHAY SILICONIX |
|
2 N-Channel (Dual)
|
30V
|
6.7A, 11.4A
|
17 mOhm @ 8A, 10V
|
2.5V @ 1mA
|
44nC @ 10V
|
1535pF @ 15V
|
1.38W, 2.35W
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|
SI4618DY-T1-GE3 |
VISHAY SILICONIX |
|
2 N-Channel (Half Bridge)
|
30V
|
6.7A, 11.4A
|
17 mOhm @ 8A, 10V
|
2.5V @ 1mA
|
44nC @ 10V
|
1535pF @ 15V
|
1.38W, 2.35W
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|