| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI4410DY,518 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 10A (Ta) | 13.5 mOhm @ 10A, 10V | 1V @ 250µA | 34nC @ 5V | - | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| RRS100P03TB1 | ROHM CO LTD | MOSFET P-Channel, Metal Oxide | 30V | 10A (Ta) | - | - | - | - | - | Surface Mount | 8-SOIC | |
| RRS100N03TB1 | ROHM CO LTD | MOSFET N-Channel, Metal Oxide | 30V | 10A (Ta) | - | - | - | - | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI4483EDY-T1-E3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 10A (Ta) | 8.5 mOhm @ 14A, 10V | 3V @ 250µA | - | - | 1.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI4384DY-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 10A (Ta) | 8.5 mOhm @ 15A, 10V | 3V @ 250µA | 18nC @ 4.5V | - | 1.47W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI4384DY-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 10A (Ta) | 8.5 mOhm @ 15A, 10V | 3V @ 250µA | 18nC @ 4.5V | - | 1.47W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI4483EDY-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 10A (Ta) | 8.5 mOhm @ 14A, 10V | 3V @ 250µA | - | - | 1.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
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