30V,Drain to Source Voltage (Vdss)
9.8nC @ 4.5V,Gate Charge (Qg) @ Vgs
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
TPN8R903NL,LQ TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 20A (Tc) 8.9 mOhm @ 10A, 10V 2.3V @ 100µA 9.8nC @ 4.5V 820pF @ 15V 700mW Surface Mount 8-PowerVDFN
SI1471DH-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 2.7A (Tc) 100 mOhm @ 2A, 10V 1.6V @ 250µA 9.8nC @ 4.5V 445pF @ 15V 2.78W Surface Mount 6-TSSOP, SC-88, SOT-363
SI1471DH-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 2.7A (Tc) 100 mOhm @ 2A, 10V 1.6V @ 250µA 9.8nC @ 4.5V 445pF @ 15V 2.78W Surface Mount 6-TSSOP, SC-88, SOT-363