30V,Drain to Source Voltage (Vdss)
8.3nC @ 10V,Gate Charge (Qg) @ Vgs
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PSMN013-30YLC,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 32A (Ta) 13.6 mOhm @ 10A, 10V 1.95V @ 1mA 8.3nC @ 10V 521pF @ 15V 26W Surface Mount SC-100, SOT-669, 4-LFPAK
SI1072X-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 1.3A (Ta) 93 mOhm @ 1.3A, 10V 3V @ 250µA 8.3nC @ 10V 280pF @ 15V 236mW Surface Mount SOT-563, SOT-666
SI1072X-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 1.3A (Ta) 93 mOhm @ 1.3A, 10V 3V @ 250µA 8.3nC @ 10V 280pF @ 15V 236mW Surface Mount SOT-563, SOT-666