| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BSF024N03LT3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 30V | 106A | 2.4 mOhm @ 20A, 10V | 2.2V @ 250µA | 71nC @ 10V | 5500pF @ 15V | 2.2W | Surface Mount | 3-WDSON | |
| SI7143DP-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 35A (Tc) | 10 mOhm @ 16.1A, 10V | 2.8V @ 250µA | 71nC @ 10V | 2230pF @ 15V | 35.7W | Surface Mount | PowerPAK® SO-8 | |
| SI7129DN-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 14.4A (Ta), 35A (Tc) | 11.4 mOhm @ 14.4A, 10V | 2.8V @ 250µA | 71nC @ 10V | 3345pF @ 15V | 52.1W | Surface Mount | PowerPAK® 1212-8 | |
| SI4825DY-T1-E3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 8.1A (Ta) | 14 mOhm @ 11.5A, 10V | 3V @ 250µA | 71nC @ 10V | - | 1.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI4825DY-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 8.1A (Ta) | 14 mOhm @ 11.5A, 10V | 3V @ 250µA | 71nC @ 10V | - | 1.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
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