| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NTMD4820NR2G | ON SEMICONDUCTOR | 2 N-Channel (Dual) | 30V | 4.9A | 20 mOhm @ 7.5A, 10V | 3V @ 250µA | 7.7nC @ 4.5V | 940pF @ 15V | 750mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| NTMS4800NR2G | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 30V | 4.9A (Ta) | 20 mOhm @ 7.5A, 10V | 3V @ 250µA | 7.7nC @ 4.5V | 940pF @ 25V | 750mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| RJK03P9DPA-00#J5A | RENESAS ELECTRONICS CORP | 2 N-Channel (Half Bridge) | 30V | 20A, 50A | 7 mOhm @ 10A, 10V | - | 7.7nC @ 4.5V | 1660pF @ 10V | 15W, 35W | Surface Mount | 8-WFDFN Exposed Pad | |
| RJK03R4DPA-00#J5A | RENESAS ELECTRONICS CORP | 2 N-Channel (Half Bridge) | 30V | 20A, 50A | 7 mOhm @ 10A, 10V | - | 7.7nC @ 4.5V | 1650pF @ 10V | 15W, 35W | Surface Mount | 8-WFDFN Exposed Pad | |
| CSD87351Q5D | TEXAS INSTRUMENTS INC | 2 N-Channel (Dual) | 30V | 32A | 7.6 mOhm @ 20A, 8V | 2.1V @ 250µA | 7.7nC @ 4.5V | 1255pF @ 15V | 12W | Surface Mount | 8-LDFN Exposed Pad | |
| CSD87351ZQ5D | TEXAS INSTRUMENTS INC | 2 N-Channel (Dual) Asymmetrical | 30V | 32A | - | 2.1V @ 250µA | 7.7nC @ 4.5V | 1255pF @ 15V | 12W | Surface Mount | 8-LDFN Exposed Pad |
© 2016 Copyright
