30V,Drain to Source Voltage (Vdss)
66nC @ 10V,Gate Charge (Qg) @ Vgs
14 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDMS7670AS FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 30V 22A 3 mOhm @ 21A, 10V 3V @ 1mA 66nC @ 10V 4225pF @ 15V 2.5W Surface Mount 8-PQFN, Power56
FDMC7660S FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 30V 20A 2.2 mOhm @ 20A, 10V 2.5V @ 1mA 66nC @ 10V 4325pF @ 15V 2.3W Surface Mount 6-MLP, Power33
FDMS0308CS FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 30V 22A (Ta) 3 mOhm @ 21A, 10V 3V @ 1mA 66nC @ 10V 4225pF @ 15V 2.5W Surface Mount Power56
IRFH8311TRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 32A (Ta), 169A (Tc) 2.1 mOhm @ 20A, 10V 2.35V @ 100µA 66nC @ 10V 4960pF @ 10V 3.6W Surface Mount 8-TQFN Exposed Pad
PSMN2R7-30PL,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A 2.7 mOhm @ 15A, 10V 2.15V @ 1mA 66nC @ 10V 3954pF @ 12V 170W Through Hole TO-220-3
PSMN2R7-30BL,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A (Tmb) 3 mOhm @ 25A, 10V 2.15V @ 1mA 66nC @ 10V 3954pF @ 15V 170W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
2SK3128(Q) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 60A (Ta) 12 mOhm @ 30A, 10V 3V @ 1mA 66nC @ 10V 2300pF @ 10V 150W Through Hole TO-3P-3, SC-65-3
2SK3127(TE24L,Q) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 45A (Ta) 12 mOhm @ 25A, 10V 3V @ 1mA 66nC @ 10V 2300pF @ 10V 65W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SI7774DP-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 60A (Tc) 3.8 mOhm @ 15A, 10V 2.2V @ 250µA 66nC @ 10V 2630pF @ 15V 48W Surface Mount PowerPAK® SO-8
SUP50N03-5M1P-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 50A (Tc) 5.1 mOhm @ 22A, 10V 2.5V @ 250µA 66nC @ 10V 2780pF @ 15V 2.7W Through Hole TO-220-3