30V,Drain to Source Voltage (Vdss)
54nC @ 4.5V,Gate Charge (Qg) @ Vgs
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRF6725MTRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 28A 2.2 mOhm @ 28A, 10V 2.35V @ 100µA 54nC @ 4.5V 4700pF @ 15V 2.8W Surface Mount -
IRF6725MTR1PBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 28A (Ta), 170A (Tc) 2.2 mOhm @ 28A, 10V 2.35V @ 100µA 54nC @ 4.5V 4700pF @ 15V 2.8W Surface Mount -
IRF6724MTRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 27A (Ta), 150A (Tc) 2.5 mOhm @ 27A, 10V 2.35V @ 100µA 54nC @ 4.5V 4404pF @ 15V 2.8W Surface Mount -
IRF6724MTR1PBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 27A (Ta), 150A (Tc) 2.5 mOhm @ 27A, 10V 2.35V @ 100µA 54nC @ 4.5V 4404pF @ 15V 2.8W Surface Mount -
IRLB8743PBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 78A (Tc) 3.2 mOhm @ 40A, 10V 2.35V @ 100µA 54nC @ 4.5V 5110pF @ 15V 140W Through Hole TO-220-3
NTMFS4108NT3G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 13.5A (Ta) 2.2 mOhm @ 21A, 10V 2.5V @ 250µA 54nC @ 4.5V 6000pF @ 15V 910mW Surface Mount 8-TDFN Exposed Pad (5 Lead)
NTMFS4108NT1G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 13.5A (Ta) 2.2 mOhm @ 21A, 10V 2.5V @ 250µA 54nC @ 4.5V 6000pF @ 15V 910mW Surface Mount 8-TDFN Exposed Pad (5 Lead)
RJK0390DPA-00#J53 RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 30V 65A (Ta) 2.2 mOhm @ 32.5A, 10V - 54nC @ 4.5V 8900pF @ 10V 60W Surface Mount 8-WDFN Exposed Pad
RJK0390DPA-00#J5A RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 30V 65A 2.2 mOhm @ 32.5A, 10V - 54nC @ 4.5V 8900pF @ 10V 60W Surface Mount 8-WFDFN Exposed Pad