| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SSM6N57NU,LF | TOSHIBA CORP | 2 N-Channel (Dual) | 30V | 4A | 46 mOhm @ 2A, 4.5V | 1V @ 1mA | 4nC @ 4.5V | 310pF @ 10V | 1W | Surface Mount | 6-WDFN Exposed Pad | |
| BSC0902NSI | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 30V | 23A (Ta), 100A (Tc) | 2.8 mOhm @ 30A, 10V | 2V @ 10mA | 4nC @ 4.5V | 1500pF @ 15V | 48W | Surface Mount | 8-PowerTDFN | |
| SI1431DH-T1-E3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 1.7A (Ta) | 200 mOhm @ 2A, 10V | 3V @ 100µA | 4nC @ 4.5V | - | 950mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | |
| SI1431DH-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 1.7A (Ta) | 200 mOhm @ 2A, 10V | 3V @ 100µA | 4nC @ 4.5V | - | 950mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 |
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