SI3410DV-T1-GE3 |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
30V
|
8A (Tc)
|
19.5 mOhm @ 5A, 10V
|
3V @ 250µA
|
33nC @ 10V
|
1295pF @ 15V
|
4.1W
|
Surface Mount
|
6-TSOP (0.065", 1.65mm Width)
|
SI3483CDV-T1-GE3 |
VISHAY SILICONIX |
|
MOSFET P-Channel, Metal Oxide
|
30V
|
8A (Tc)
|
34 mOhm @ 6.1A, 10V
|
3V @ 250µA
|
33nC @ 10V
|
1000pF @ 15V
|
4.2W
|
Surface Mount
|
6-TSOP (0.065", 1.65mm Width)
|
SI3483CDV-T1-E3 |
VISHAY SILICONIX |
|
MOSFET P-Channel, Metal Oxide
|
30V
|
8A (Tc)
|
34 mOhm @ 6.1A, 10V
|
3V @ 250µA
|
33nC @ 10V
|
1000pF @ 15V
|
4.2W
|
Surface Mount
|
6-TSOP (0.065", 1.65mm Width)
|
SI3410DV-T1-E3 |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
30V
|
8A (Tc)
|
19.5 mOhm @ 5A, 10V
|
3V @ 250µA
|
33nC @ 10V
|
1295pF @ 15V
|
4.1W
|
Surface Mount
|
6-TSOP (0.065", 1.65mm Width)
|