30V,Drain to Source Voltage (Vdss)
25nC @ 11.5V,Gate Charge (Qg) @ Vgs
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NTD4809NT4G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 9.6A (Ta), 58A (Tc) 9 mOhm @ 30A, 10V 2.5V @ 250µA 25nC @ 11.5V 1456pF @ 12V 1.4W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
NTMFS4921NT1G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 8.8A (Ta), 58.5A (Tc) 6.95 mOhm @ 30A, 10V 2.5V @ 250µA 25nC @ 11.5V 1400pF @ 12V 870mW Surface Mount 8-TDFN Exposed Pad (5 Lead)
NTMFS4921NT3G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 8.8A (Ta), 58.5A (Tc) 6.95 mOhm @ 30A, 10V 2.5V @ 250µA 25nC @ 11.5V 1400pF @ 12V 870mW Surface Mount 8-TDFN Exposed Pad (5 Lead)
NTD4959N-1G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 9A (Ta), 58A (Tc) 9 mOhm @ 30A, 10V 2.5V @ 250µA 25nC @ 11.5V 1456pF @ 12V 1.3W Through Hole TO-251-3 Short Leads, IPak, TO-251AA
NTD4959N-35G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 9A (Ta), 58A (Tc) 9 mOhm @ 30A, 10V 2.5V @ 250µA 25nC @ 11.5V 1456pF @ 12V 1.3W Through Hole TO-251-3 Stub Leads, IPak
NTD4959NT4G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 9A (Ta), 58A (Tc) 9 mOhm @ 30A, 10V 2.5V @ 250µA 25nC @ 11.5V 1456pF @ 12V 1.3W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63