| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NDT452P | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 30V | 3A (Ta) | 180 mOhm @ 3A, 10V | 3V @ 250µA | 25nC @ 10V | 525pF @ 10V | 1.1W | Surface Mount | TO-261-4, TO-261AA | |
| NDM3000 | FAIRCHILD SEMICONDUCTOR CORP | 3 N and 3 P-Channel (3-Phase Bridge) | 30V | 3A | 90 mOhm @ 3A, 10V | 3V @ 250µA | 25nC @ 10V | 360pF @ 10V | 1.4W | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | |
| SI3481DV-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 4A (Ta) | 48 mOhm @ 5.3A, 10V | 3V @ 250µA | 25nC @ 10V | - | 1.14W | Surface Mount | 6-TSOP (0.065", 1.65mm Width) | |
| SI3481DV-T1-E3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 4A (Ta) | 48 mOhm @ 5.3A, 10V | 3V @ 250µA | 25nC @ 10V | - | 1.14W | Surface Mount | 6-TSOP (0.065", 1.65mm Width) | |
| SI4230DY-T1-GE3 | VISHAY SILICONIX | 2 N-Channel (Dual) | 30V | 8A | 20.5 mOhm @ 8A, 10V | 3V @ 250µA | 25nC @ 10V | 950pF @ 15V | 3.2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
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