30V,Drain to Source Voltage (Vdss)
19nC @ 10V,Gate Charge (Qg) @ Vgs
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SPD30N03S2L-20 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 30A 20 mOhm @ 18A, 10V 2V @ 23µA 19nC @ 10V 700pF @ 25V 60W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IPD30N03S2L-20 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 30A (Tc) 20 mOhm @ 18A, 10V 2V @ 23µA 19nC @ 10V 530pF @ 25V 60W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SPD30N03S2L-20 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 30A (Tc) 20 mOhm @ 18A, 10V 2V @ 23µA 19nC @ 10V 700pF @ 25V 60W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN6R0-30YLB,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 71A (Tmb) 6.5 mOhm @ 20A, 10V 1.95V @ 1mA 19nC @ 10V 1088pF @ 15V 58W Surface Mount SC-100, SOT-669, 4-LFPAK
QS8J5TR ROHM CO LTD
2 P-Channel (Dual) 30V 5A 39 mOhm @ 5A, 10V 2.5V @ 1mA 19nC @ 10V 1100pF @ 10V 600mW Surface Mount 8-SMD, Flat Lead
TPC8A06-H(TE12LQM) TOSHIBA CORP
MOSFET N-Channel, Schottky, Metal Oxide 30V 12A 10.1 mOhm @ 6A, 10V 2.3V @ 1mA 19nC @ 10V 1800pF @ 10V - Surface Mount 8-SOIC (0.173", 4.40mm Width)
SI3457BDV-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 3.7A (Ta) 54 mOhm @ 5A, 10V 3V @ 250µA 19nC @ 10V - 1.14W Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI3457BDV-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 3.7A (Ta) 54 mOhm @ 5A, 10V 3V @ 250µA 19nC @ 10V - 1.14W Surface Mount 6-TSOP (0.065", 1.65mm Width)
SIZ340DT-T1-GE3 VISHAY SILICONIX
2 N-Channel (Half Bridge) 30V 15.6A (Ta), 22.6A (Ta) 9.5 mOhm @ 15.6A, 10V 2.4V @ 250µA 19nC @ 10V 760pF @ 15V 3.7W, 4.2W Surface Mount 8-PowerWDFN