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30V,Drain to Source Voltage (Vdss)

13nC @ 4.5V,Gate Charge (Qg) @ Vgs

Through Hole,Mounting Type

8 parts found

Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case

IRLU8721PBF INTERNATIONAL RECTIFIER CORP

MOSFET N-Channel, Metal Oxide 30V 65A (Tc) 8.4 mOhm @ 25A, 10V 2.35V @ 25µA 13nC @ 4.5V 1030pF @ 15V 65W Through Hole TO-251-3 Long Leads, IPak, TO-251AB

IRLB8721PBF INTERNATIONAL RECTIFIER CORP

MOSFET N-Channel, Metal Oxide 30V 62A (Tc) 8.7 mOhm @ 31A, 10V 2.35V @ 25µA 13nC @ 4.5V 1077pF @ 15V 65W Through Hole TO-220-3

NTD4809N-35G ON SEMICONDUCTOR

MOSFET N-Channel, Metal Oxide 30V 9.6A (Ta), 58A (Tc) 9 mOhm @ 30A, 10V 2.5V @ 250µA 13nC @ 4.5V 1456pF @ 12V 1.3W Through Hole TO-251-3 Stub Leads, IPak

NTD4808N-1G ON SEMICONDUCTOR

MOSFET N-Channel, Metal Oxide 30V 10A (Ta), 63A (Tc) 8 mOhm @ 30A, 10V 2.5V @ 250µA 13nC @ 4.5V 1538pF @ 12V 1.3W Through Hole TO-251-3 Short Leads, IPak, TO-251AA

NTD4808N-35G ON SEMICONDUCTOR

MOSFET N-Channel, Metal Oxide 30V 10A (Ta), 63A (Tc) 8 mOhm @ 30A, 10V 2.5V @ 250µA 13nC @ 4.5V 1538pF @ 12V 1.3W Through Hole TO-251-3 Stub Leads, IPak

NTD4809N-1G ON SEMICONDUCTOR

MOSFET N-Channel, Metal Oxide 30V 9.6A (Ta), 58A (Tc) 9 mOhm @ 30A, 10V 2.5V @ 250µA 13nC @ 4.5V 1456pF @ 12V 1.3W Through Hole TO-251-3 Short Leads, IPak, TO-251AA

NTD4809NA-1G ON SEMICONDUCTOR

MOSFET N-Channel, Metal Oxide 30V 9.6A (Ta), 58A (Tc) 9 mOhm @ 30A, 10V 2.5V @ 250µA 13nC @ 4.5V 1456pF @ 12V 2W Through Hole TO-251-3 Short Leads, IPak, TO-251AA

NTD4809NA-35G ON SEMICONDUCTOR

MOSFET N-Channel, Metal Oxide 30V 9.6A (Ta), 58A (Tc) 9 mOhm @ 30A, 10V 2.5V @ 250µA 13nC @ 4.5V 1456pF @ 12V 2W Through Hole TO-251-3 Stub Leads, IPak

Part Numbers	Manufacturer Name	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) @ Vgs	Input Capacitance (Ciss) @ Vds	Power - Max	Mounting Type	Package / Case
IRLU8721PBF	INTERNATIONAL RECTIFIER CORP	MOSFET N-Channel, Metal Oxide	30V	65A (Tc)	8.4 mOhm @ 25A, 10V	2.35V @ 25µA	13nC @ 4.5V	1030pF @ 15V	65W	Through Hole	TO-251-3 Long Leads, IPak, TO-251AB
IRLB8721PBF	INTERNATIONAL RECTIFIER CORP	MOSFET N-Channel, Metal Oxide	30V	62A (Tc)	8.7 mOhm @ 31A, 10V	2.35V @ 25µA	13nC @ 4.5V	1077pF @ 15V	65W	Through Hole	TO-220-3
NTD4809N-35G	ON SEMICONDUCTOR	MOSFET N-Channel, Metal Oxide	30V	9.6A (Ta), 58A (Tc)	9 mOhm @ 30A, 10V	2.5V @ 250µA	13nC @ 4.5V	1456pF @ 12V	1.3W	Through Hole	TO-251-3 Stub Leads, IPak
NTD4808N-1G	ON SEMICONDUCTOR	MOSFET N-Channel, Metal Oxide	30V	10A (Ta), 63A (Tc)	8 mOhm @ 30A, 10V	2.5V @ 250µA	13nC @ 4.5V	1538pF @ 12V	1.3W	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA
NTD4808N-35G	ON SEMICONDUCTOR	MOSFET N-Channel, Metal Oxide	30V	10A (Ta), 63A (Tc)	8 mOhm @ 30A, 10V	2.5V @ 250µA	13nC @ 4.5V	1538pF @ 12V	1.3W	Through Hole	TO-251-3 Stub Leads, IPak
NTD4809N-1G	ON SEMICONDUCTOR	MOSFET N-Channel, Metal Oxide	30V	9.6A (Ta), 58A (Tc)	9 mOhm @ 30A, 10V	2.5V @ 250µA	13nC @ 4.5V	1456pF @ 12V	1.3W	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA
NTD4809NA-1G	ON SEMICONDUCTOR	MOSFET N-Channel, Metal Oxide	30V	9.6A (Ta), 58A (Tc)	9 mOhm @ 30A, 10V	2.5V @ 250µA	13nC @ 4.5V	1456pF @ 12V	2W	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA
NTD4809NA-35G	ON SEMICONDUCTOR	MOSFET N-Channel, Metal Oxide	30V	9.6A (Ta), 58A (Tc)	9 mOhm @ 30A, 10V	2.5V @ 250µA	13nC @ 4.5V	1456pF @ 12V	2W	Through Hole	TO-251-3 Stub Leads, IPak

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