30V,Drain to Source Voltage (Vdss)
105nC @ 10V,Gate Charge (Qg) @ Vgs
188W,Power - Max
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SPB80N03S2L-04 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 80A (Tc) 3.9 mOhm @ 80A, 10V 2V @ 130µA 105nC @ 10V 3900pF @ 25V 188W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPB80N03S2L-04 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 80A (Tc) 3.9 mOhm @ 80A, 10V 2V @ 130µA 105nC @ 10V 3900pF @ 25V 188W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPI80N03S2L-04 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 80A (Tc) 4.2 mOhm @ 80A, 10V 2V @ 130µA 105nC @ 10V 3900pF @ 25V 188W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
SPP80N03S2L-04 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 80A (Tc) 4.2 mOhm @ 80A, 10V 2V @ 130µA 105nC @ 10V 3900pF @ 25V 188W Through Hole TO-220-3