30V,Drain to Source Voltage (Vdss)
10.5nC @ 4.5V,Gate Charge (Qg) @ Vgs
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI4354DY-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 9.5A (Ta) 16.5 mOhm @ 9.5A, 10V 1.6V @ 250µA 10.5nC @ 4.5V - 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4354DY-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 9.5A (Ta) 16.5 mOhm @ 9.5A, 10V 1.6V @ 250µA 10.5nC @ 4.5V - 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4914BDY-T1-GE3 VISHAY SILICONIX
2 N-Channel (Dual) 30V 8.4A, 8A 21 mOhm @ 8A, 10V 2.7V @ 250µA 10.5nC @ 4.5V - 2.7W, 3.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4914BDY-T1-E3 VISHAY SILICONIX
2 N-Channel (Dual) 30V 8.4A, 8A 21 mOhm @ 8A, 10V 2.7V @ 250µA 10.5nC @ 4.5V - 2.7W, 3.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)