30V,Drain to Source Voltage (Vdss)
2V @ 250µA,Vgs(th) (Max) @ Id
6-UDFN Exposed Pad,Package / Case
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMN3016LFDE-13 DIODES INC
MOSFET N-Channel, Metal Oxide 30V 10A (Ta) 12 mOhm @ 11A, 10V 2V @ 250µA 25.1nC @ 10V 1415pF @ 15V 730mW Surface Mount 6-UDFN Exposed Pad
DMN3016LFDE-7 DIODES INC
MOSFET N-Channel, Metal Oxide 30V 10A (Ta) 12 mOhm @ 11A, 10V 2V @ 250µA 25.1nC @ 10V 1415pF @ 15V 730mW Surface Mount 6-UDFN Exposed Pad
PMPB20EN,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 7.2A (Ta) 19.5 mOhm @ 7A, 10V 2V @ 250µA 10.8nC @ 10V 435pF @ 10V 1.7W Surface Mount 6-UDFN Exposed Pad
PMPB11EN,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 9A (Ta) 14.5 mOhm @ 9A, 10V 2V @ 250µA 20.6nC @ 10V 840pF @ 10V 1.7W Surface Mount 6-UDFN Exposed Pad
PMPB20ENZ NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 7.2A (Ta) 19.5 mOhm @ 7A, 10V 2V @ 250µA 10.8nC @ 10V 435pF @ 10V 1.7W Surface Mount 6-UDFN Exposed Pad