30V,Drain to Source Voltage (Vdss)
13A (Ta),Current - Continuous Drain (Id) @ 25°C
2.5V @ 1mA,Vgs(th) (Max) @ Id
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
UPA2810T1L-E1-AY RENESAS ELECTRONICS CORP
MOSFET P-Channel, Metal Oxide 30V 13A (Ta) 12 mOhm @ 13A, 10V 2.5V @ 1mA 40nC @ 10V 1860pF @ 10V 1.5W Surface Mount 8-VDFN Exposed Pad
UPA2810T1L-E2-AY RENESAS ELECTRONICS CORP
MOSFET P-Channel, Metal Oxide 30V 13A (Ta) 12 mOhm @ 13A, 10V 2.5V @ 1mA 40nC @ 10V 1860pF @ 10V 1.5W Surface Mount 8-VDFN Exposed Pad
RMW130N03TB ROHM CO LTD
MOSFET N-Channel, Metal Oxide 30V 13A (Ta) 12.6 mOhm @ 13A, 10V 2.5V @ 1mA 12nC @ 10V 650pF @ 15V 3W Surface Mount 8-SMD, Flat Lead
RSS130N03FU6TB ROHM CO LTD
MOSFET N-Channel, Metal Oxide 30V 13A (Ta) 8.1 mOhm @ 13A, 10V 2.5V @ 1mA 35nC @ 5V 2000pF @ 10V 2W Surface Mount 8-SOIC (0.154", 3.90mm Width)
RSS130N03TB ROHM CO LTD
MOSFET N-Channel, Metal Oxide 30V 13A (Ta) 8.1 mOhm @ 13A, 10V 2.5V @ 1mA 35nC @ 5V 2000pF @ 10V 2W Surface Mount 8-SOIC (0.154", 3.90mm Width)
TPC8026(TE12L,Q,M) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 13A (Ta) 6.6 mOhm @ 6.5A, 10V 2.5V @ 1mA 42nC @ 10V 1800pF @ 10V - Surface Mount 8-SOIC (0.173", 4.40mm Width)