30V,Drain to Source Voltage (Vdss)
2.3V @ 100µA,Vgs(th) (Max) @ Id
16 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
TPN8R903NL,LQ TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 20A (Tc) 8.9 mOhm @ 10A, 10V 2.3V @ 100µA 9.8nC @ 4.5V 820pF @ 15V 700mW Surface Mount 8-PowerVDFN
TP89R103NL,LQ TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 15A (Tc) 9.1 mOhm @ 7.5A, 10V 2.3V @ 100µA 9.8nC @ 10V 820pF @ 15V 1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
TPH11003NL,LQ TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 32A (Ta) 11 mOhm @ 5.5A, 10V 2.3V @ 100µA 7.5nC @ 10V 660pF @ 15V 1.6W Surface Mount 8-PowerVDFN
TPC8067-H,LQ(S TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 9A (Ta) 25 mOhm @ 4.5A, 10V 2.3V @ 100µA 9.5nC @ 10V 690pF @ 10V - Surface Mount 8-SOIC (0.154", 3.90mm Width)
TPCC8067-H,LQ(S TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 9A (Ta) 25 mOhm @ 4.5A, 10V 2.3V @ 100µA 9.5nC @ 10V 690pF @ 10V 15W Surface Mount 8-PowerVDFN
TPN11003NL,LQ TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 11A (Tc) 11 mOhm @ 5.5A, 10V 2.3V @ 100µA 7.5nC @ 10V 660pF @ 15V 700mW Surface Mount 8-PowerVDFN
TPCC8061-H,LQ(S TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 8A (Ta) 26 mOhm @ 4A, 10V 2.3V @ 100µA 11nC @ 10V 630pF @ 10V 15W Surface Mount 8-PowerVDFN
TPC6008-H(TE85L,FM TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 5.9A (Ta) 60 mOhm @ 3A, 10V 2.3V @ 100µA 4.8nC @ 10V 300pF @ 10V - Surface Mount SOT-23-6 Thin, TSOT-23-6
TK40P03M1(T6RSS-Q) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 40A (Ta) 10.8 mOhm @ 20A, 10V 2.3V @ 100µA 17.5nC @ 10V 1150pF @ 10V 33W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
TK40P03M1(T6RDS-Q) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 40A (Ta) 10.8 mOhm @ 20A, 10V 2.3V @ 100µA 17.5nC @ 10V 1150pF @ 10V 33W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63