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30V,Drain to Source Voltage (Vdss)

6.3 mOhm @ 10A, 10V,Rds On (Max) @ Id, Vgs

3 parts found

Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case

TPN6R303NC,LQ TOSHIBA CORP

MOSFET N-Channel, Metal Oxide 30V 20A (Ta) 6.3 mOhm @ 10A, 10V 2.3V @ 200µA 24nC @ 10V 1370pF @ 15V 19W Surface Mount 8-PowerVDFN

TPCC8074,LQ(O TOSHIBA CORP

MOSFET N-Channel, Metal Oxide 30V 20A (Ta) 6.3 mOhm @ 10A, 10V 2.3V @ 200µA 25nC @ 10V 1800pF @ 10V 30W Surface Mount 8-PowerVDFN

SIJ484DP-T1-GE3 VISHAY SILICONIX

MOSFET N-Channel, Metal Oxide 30V 21.5A (Ta), 35A (Tc) 6.3 mOhm @ 10A, 10V 2.5V @ 250µA 45nC @ 10V 1600pF @ 15V 27.7W Surface Mount PowerPAK® SO-8

Part Numbers	Manufacturer Name	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) @ Vgs	Input Capacitance (Ciss) @ Vds	Power - Max	Mounting Type	Package / Case
TPN6R303NC,LQ	TOSHIBA CORP	MOSFET N-Channel, Metal Oxide	30V	20A (Ta)	6.3 mOhm @ 10A, 10V	2.3V @ 200µA	24nC @ 10V	1370pF @ 15V	19W	Surface Mount	8-PowerVDFN
TPCC8074,LQ(O	TOSHIBA CORP	MOSFET N-Channel, Metal Oxide	30V	20A (Ta)	6.3 mOhm @ 10A, 10V	2.3V @ 200µA	25nC @ 10V	1800pF @ 10V	30W	Surface Mount	8-PowerVDFN
SIJ484DP-T1-GE3	VISHAY SILICONIX	MOSFET N-Channel, Metal Oxide	30V	21.5A (Ta), 35A (Tc)	6.3 mOhm @ 10A, 10V	2.5V @ 250µA	45nC @ 10V	1600pF @ 15V	27.7W	Surface Mount	PowerPAK® SO-8

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