30V,Drain to Source Voltage (Vdss)
5.1 mOhm @ 10A, 10V,Rds On (Max) @ Id, Vgs
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK7K5R1-30E,115 NXP SEMICONDUCTORS
2 N-Channel (Dual) 30V 40A 5.1 mOhm @ 10A, 10V 4V @ 1mA 31.1nC @ 10V 2352pF @ 25V 68W Surface Mount SOT1205, 8-LFPAK56
SIRA14DP-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 19.8A (Ta), 20A (Tc) 5.1 mOhm @ 10A, 10V 2.2V @ 250µA 29nC @ 10V 1450pF @ 15V 15.6W Surface Mount PowerPAK® SO-8
SISA14DN-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 20A 5.1 mOhm @ 10A, 10V 2.2V @ 250µA 29nC @ 10V 1450pF @ 15V 26.5W Surface Mount PowerPAK® 1212-8