30V,Drain to Source Voltage (Vdss)
48 mOhm @ 5.3A, 10V,Rds On (Max) @ Id, Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI3481DV-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 4A (Ta) 48 mOhm @ 5.3A, 10V 3V @ 250µA 25nC @ 10V - 1.14W Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI3481DV-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 4A (Ta) 48 mOhm @ 5.3A, 10V 3V @ 250µA 25nC @ 10V - 1.14W Surface Mount 6-TSOP (0.065", 1.65mm Width)