30V,Drain to Source Voltage (Vdss)
3.2 mOhm @ 9A, 10V,Rds On (Max) @ Id, Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
TPC8035-H(TE12L,QM TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 18A (Ta) 3.2 mOhm @ 9A, 10V 2.3V @ 1mA 82nC @ 10V 7800pF @ 10V - Surface Mount 8-SOIC (0.173", 4.40mm Width)
TPC8120(TE12L,Q,M) TOSHIBA CORP
MOSFET P-Channel, Metal Oxide 30V 18A (Ta) 3.2 mOhm @ 9A, 10V 2V @ 1mA 180nC @ 10V 7420pF @ 10V - Surface Mount 8-SOIC (0.173", 4.40mm Width)