30V,Drain to Source Voltage (Vdss)
2.1 mOhm @ 21.7A, 10V,Rds On (Max) @ Id, Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SIE860DF-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 60A (Tc) 2.1 mOhm @ 21.7A, 10V 2.5V @ 250µA 105nC @ 10V 4500pF @ 15V 104W Surface Mount 10-PolarPAK® (M)
SIE860DF-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 60A (Tc) 2.1 mOhm @ 21.7A, 10V 2.5V @ 250µA 105nC @ 10V 4500pF @ 15V 104W Surface Mount 10-PolarPAK® (M)