30V,Drain to Source Voltage (Vdss)
18 mOhm @ 9A, 10V,Rds On (Max) @ Id, Vgs
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMN3030LSS-13 DIODES INC
MOSFET N-Channel, Metal Oxide 30V 9A (Ta) 18 mOhm @ 9A, 10V 2.1V @ 250µA 25nC @ 10V 741pF @ 15V 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SH8M4TB1 ROHM CO LTD
N and P-Channel 30V 9A, 7A 18 mOhm @ 9A, 10V 2.5V @ 1mA 15nC @ 5V 1190pF @ 10V 2W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SP8M4FU6TB ROHM CO LTD
N and P-Channel 30V 9A, 7A 18 mOhm @ 9A, 10V 2.5V @ 1mA 21nC @ 5V 1190pF @ 10V 2W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SP8M9TB ROHM CO LTD
N and P-Channel 30V 9A, 5A 18 mOhm @ 9A, 10V 2.5V @ 1mA 21nC @ 5V 1190pF @ 10V 2W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SP8M9FU6TB ROHM CO LTD
N and P-Channel 30V 9A, 5A 18 mOhm @ 9A, 10V 2.5V @ 1mA 21nC @ 5V 1190pF @ 10V 2W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SIA418DJ-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 12A 18 mOhm @ 9A, 10V 2.4V @ 250µA 17nC @ 10V 570pF @ 15V 19W Surface Mount PowerPAK® SC-70-6
SIA462DJ-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 12A (Ta), 12A (Tc) 18 mOhm @ 9A, 10V 2.4V @ 250µA 17nC @ 10V 570pF @ 15V 3.5W Surface Mount PowerPAK® SC-70-6