| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NTMS4176PR2G | ON SEMICONDUCTOR | MOSFET P-Channel, Metal Oxide | 30V | 5.5A (Ta) | 18 mOhm @ 9.6A, 10V | 2.5V @ 250µA | 17nC @ 4.5V | 1720pF @ 24V | 810mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI4835BDY-T1-E3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 7.4A (Ta) | 18 mOhm @ 9.6A, 10V | 3V @ 250µA | 37nC @ 5V | - | 1.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
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