30V,Drain to Source Voltage (Vdss)
60A (Ta),Current - Continuous Drain (Id) @ 25°C
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
RJK03C1DPB-00#J5 RENESAS ELECTRONICS CORP
MOSFET N-Channel, Schottky, Metal Oxide 30V 60A (Ta) 2.2 mOhm @ 30A, 10V - 42nC @ 4.5V 6000pF @ 10V 65W Surface Mount SC-100, SOT-669
RJK0328DPB-01#J0 RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 30V 60A (Ta) 2.1 mOhm @ 30A, 10V 2.5V @ 1mA 42nC @ 4.5V 6380pF @ 10V 65W Surface Mount SC-100, SOT-669
HAT2164H-EL-E RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 30V 60A (Ta) 3.1 mOhm @ 30A, 10V - 50nC @ 4.5V 7600pF @ 10V 30W Surface Mount SC-100, SOT-669
RJK0301DPB-00#J0 RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 30V 60A (Ta) 2.8 mOhm @ 30A, 10V - 32nC @ 4.5V 5000pF @ 10V 65W Surface Mount SC-100, SOT-669
HAT2164H RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 30V 60A (Ta) 3.1 mOhm @ 30A, 10V - 50nC @ 4.5V 7600pF @ 10V 30W Surface Mount SC-100, SOT-669
RJK0328DPB-00#J0 RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 30V 60A (Ta) 2.1 mOhm @ 30A, 10V - 42nC @ 4.5V 6380pF @ 10V 65W Surface Mount SC-100, SOT-669
TPH1R403NL,L1Q TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 60A (Ta) 1.4 mOhm @ 30A, 10V 2.3V @ 500µA 46nC @ 10V 4400pF @ 15V 64W Surface Mount 8-PowerVDFN
TK60P03M1,RQ(S TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 60A (Ta) 6.4 mOhm @ 30A, 10V 2.3V @ 500µA 40nC @ 10V 2700pF @ 10V 63W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
2SK3128(Q) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 60A (Ta) 12 mOhm @ 30A, 10V 3V @ 1mA 66nC @ 10V 2300pF @ 10V 150W Through Hole TO-3P-3, SC-65-3