30V,Drain to Source Voltage (Vdss)
4.6A (Tc),Current - Continuous Drain (Id) @ 25°C
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI4833ADY-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 4.6A (Tc) 72 mOhm @ 3.6A, 10V 2.5V @ 250µA 15nC @ 10V 750pF @ 15V 2.75W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4833ADY-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 4.6A (Tc) 72 mOhm @ 3.6A, 10V 2.5V @ 250µA 15nC @ 10V 750pF @ 15V 2.75W Surface Mount 8-SOIC (0.154", 3.90mm Width)