30V,Drain to Source Voltage (Vdss)
4.1A (Ta), 5.1A (Tc),Current - Continuous Drain (Id) @ 25°C
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI3457CDV-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 4.1A (Ta), 5.1A (Tc) 74 mOhm @ 4.1A, 10V 3V @ 250µA 15nC @ 10V 450pF @ 15V 3W Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI3457CDV-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 4.1A (Ta), 5.1A (Tc) 74 mOhm @ 4.1A, 10V 3V @ 250µA 15nC @ 10V 450pF @ 15V 3W Surface Mount 6-TSOP (0.065", 1.65mm Width)