30V,Drain to Source Voltage (Vdss)
3.1A (Ta),Current - Continuous Drain (Id) @ 25°C
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMP3105LVT-7 DIODES INC
MOSFET P-Channel, Metal Oxide 30V 3.1A (Ta) 75 mOhm @ 4.2A, 10V 1.5V @ 250µA 19.8nC @ 10V 839pF @ 15V 1.15W Surface Mount SOT-23-6 Thin, TSOT-23-6
PMV37EN,215 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 3.1A (Ta) 36 mOhm @ 3.1A, 10V 2.5V @ 250µA 10nC @ 10V 330pF @ 10V 380mW Surface Mount TO-236-3, SC-59, SOT-23-3
PMDPB56XN,115 NXP SEMICONDUCTORS
2 N-Channel (Dual) 30V 3.1A (Ta) 73 mOhm @ 3.1A, 4.5V 1.5V @ 250µA 2.9nC @ 4.5V 170pF @ 15V 510mW Surface Mount 6-UDFN Exposed Pad
SI2343DS-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 3.1A (Ta) 53 mOhm @ 4A, 10V 3V @ 250µA 21nC @ 10V 540pF @ 15V 750mW Surface Mount TO-236-3, SC-59, SOT-23-3
SI5449DC-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 3.1A (Ta) 85 mOhm @ 3.1A, 4.5V 600mV @ 250µA 11nC @ 4.5V - 1.3W Surface Mount 8-SMD, Flat Lead
SI5449DC-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 3.1A (Ta) 85 mOhm @ 3.1A, 4.5V 600mV @ 250µA 11nC @ 4.5V - 1.3W Surface Mount 8-SMD, Flat Lead
SI2343DS-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 3.1A (Ta) 53 mOhm @ 4A, 10V 3V @ 250µA 21nC @ 10V 540pF @ 15V 750mW Surface Mount TO-236-3, SC-59, SOT-23-3