30V,Drain to Source Voltage (Vdss)
1.9A (Ta),Current - Continuous Drain (Id) @ 25°C
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDN357N FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 30V 1.9A (Ta) 60 mOhm @ 2.2A, 10V 2V @ 250µA 5.9nC @ 5V 235pF @ 10V 460mW Surface Mount TO-236-3, SC-59, SOT-23-3
BSH108,215 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 1.9A (Ta) 120 mOhm @ 1A, 10V 2V @ 1mA 10nC @ 10V 190pF @ 10V 830mW Surface Mount TO-236-3, SC-59, SOT-23-3
PMV90EN,215 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 1.9A (Ta) 84 mOhm @ 1.9A, 10V 2.5V @ 250µA 4nC @ 10V 132pF @ 15V 310mW Surface Mount TO-236-3, SC-59, SOT-23-3
SSM5H12TU(TE85L,F) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 1.9A (Ta) 133 mOhm @ 1A, 4V 1V @ 1mA 1.9nC @ 4V 123pF @ 15V 500mW Surface Mount 6-SMD (5 Leads), Flat Lead
SI1433DH-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 1.9A (Ta) 150 mOhm @ 2.2A, 10V 3V @ 100µA 5nC @ 4.5V - 950mW Surface Mount 6-TSSOP, SC-88, SOT-363
SI1433DH-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 1.9A (Ta) 150 mOhm @ 2.2A, 10V 3V @ 100µA 5nC @ 4.5V - 950mW Surface Mount 6-TSSOP, SC-88, SOT-363