30V,Drain to Source Voltage (Vdss)
1.6A (Ta),Current - Continuous Drain (Id) @ 25°C
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NDS355N FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 30V 1.6A (Ta) 85 mOhm @ 1.9A, 10V 2V @ 250µA 5nC @ 5V 245pF @ 10V 460mW Surface Mount TO-236-3, SC-59, SOT-23-3
CPH3360-TL-H ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 30V 1.6A (Ta) 303 mOhm @ 800mA, 10V - 2.2nC @ 10V 82pF @ 10V 900mW Surface Mount TO-236-3, SC-59, SOT-23-3
MGSF1N03LT1G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 1.6A (Ta) 100 mOhm @ 1.2A, 10V 2.4V @ 250µA - 140pF @ 5V 420mW Surface Mount TO-236-3, SC-59, SOT-23-3
SCH2825-TL-E ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 1.6A (Ta) 180 mOhm @ 800mA, 10V - 2nC @ 10V 88pF @ 10V 600mW Surface Mount 6-SMD, Flat Leads
MGSF1N03LT1 ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 1.6A (Ta) 100 mOhm @ 1.2A, 10V 2.4V @ 250µA - 140pF @ 5V 420mW Surface Mount TO-236-3, SC-59, SOT-23-3
MGSF1N03LT3 ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 1.6A (Ta) 100 mOhm @ 1.2A, 10V 2.4V @ 250µA - 140pF @ 5V 420mW Surface Mount TO-236-3, SC-59, SOT-23-3
MGSF1N03LT3G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 1.6A (Ta) 100 mOhm @ 1.2A, 10V 2.4V @ 250µA - 140pF @ 5V 420mW Surface Mount TO-236-3, SC-59, SOT-23-3
NTS4172NT1G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 1.6A (Ta) 93 mOhm @ 1.7A, 10V 1.4V @ 250µA 4.38nC @ 4.5V 381pF @ 15V 294mW Surface Mount SC-70, SOT-323
SI3851DV-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 1.6A (Ta) 200 mOhm @ 1.8A, 10V 1V @ 250µA 3.6nC @ 5V - 830mW Surface Mount 6-TSOP (0.065", 1.65mm Width)