| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI7386DP-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 12A (Ta) | 7 mOhm @ 19A, 10V | 2.5V @ 250µA | 18nC @ 4.5V | - | 1.8W | Surface Mount | PowerPAK® SO-8 | |
| SI7386DP-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 12A (Ta) | 7 mOhm @ 19A, 10V | 2.5V @ 250µA | 18nC @ 4.5V | - | 1.8W | Surface Mount | PowerPAK® SO-8 | |
| SI7384DP-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 11A (Ta) | 8.5 mOhm @ 18A, 10V | 3V @ 250µA | 18nC @ 4.5V | - | 1.8W | Surface Mount | PowerPAK® SO-8 | |
| SI7384DP-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 11A (Ta) | 8.5 mOhm @ 18A, 10V | 3V @ 250µA | 18nC @ 4.5V | - | 1.8W | Surface Mount | PowerPAK® SO-8 | |
| SI7860DP-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 11A (Ta) | 8 mOhm @ 18A, 10V | 3V @ 250µA | 18nC @ 4.5V | - | 1.8W | Surface Mount | PowerPAK® SO-8 | |
| SI7860DP-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 11A (Ta) | 8 mOhm @ 18A, 10V | 3V @ 250µA | 18nC @ 4.5V | - | 1.8W | Surface Mount | PowerPAK® SO-8 | |
| SI7860ADP-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 11A (Ta) | 9.5 mOhm @ 16A, 10V | 3V @ 250µA | 18nC @ 4.5V | - | 1.8W | Surface Mount | PowerPAK® SO-8 | |
| SI7860ADP-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 11A (Ta) | 9.5 mOhm @ 16A, 10V | 3V @ 250µA | 18nC @ 4.5V | - | 1.8W | Surface Mount | PowerPAK® SO-8 |
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