| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AON7520 | ALPHA & OMEGA SEMICONDUCTOR LTD | MOSFET N-Channel, Metal Oxide | 30V | 48A (Ta), 50A (Tc) | 1.8 mOhm @ 20A, 10V | 1.2V @ 250µA | 105nC @ 10V | 4175pF @ 15V | 6.2W | Surface Mount | 8-PowerWDFN | |
| SPB80N03S2L-04 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 30V | 80A (Tc) | 3.9 mOhm @ 80A, 10V | 2V @ 130µA | 105nC @ 10V | 3900pF @ 25V | 188W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| SPB80N03S2L-04 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 30V | 80A (Tc) | 3.9 mOhm @ 80A, 10V | 2V @ 130µA | 105nC @ 10V | 3900pF @ 25V | 188W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| SPI80N03S2L-04 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 30V | 80A (Tc) | 4.2 mOhm @ 80A, 10V | 2V @ 130µA | 105nC @ 10V | 3900pF @ 25V | 188W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| SPP80N03S2L-04 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 30V | 80A (Tc) | 4.2 mOhm @ 80A, 10V | 2V @ 130µA | 105nC @ 10V | 3900pF @ 25V | 188W | Through Hole | TO-220-3 | |
| SIE860DF-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 60A (Tc) | 2.1 mOhm @ 21.7A, 10V | 2.5V @ 250µA | 105nC @ 10V | 4500pF @ 15V | 104W | Surface Mount | 10-PolarPAK® (M) | |
| SI4126DY-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 26.5A (Ta), 39A (Tc) | 2.75 mOhm @ 15A, 10V | 2.5V @ 250µA | 105nC @ 10V | 4405pF @ 15V | 7.8W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SIE860DF-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 60A (Tc) | 2.1 mOhm @ 21.7A, 10V | 2.5V @ 250µA | 105nC @ 10V | 4500pF @ 15V | 104W | Surface Mount | 10-PolarPAK® (M) |
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