MOSFET N-Channel, Metal Oxide,FET Type
30V,Drain to Source Voltage (Vdss)
10.8nC @ 10V,Gate Charge (Qg) @ Vgs
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PMPB20EN,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 7.2A (Ta) 19.5 mOhm @ 7A, 10V 2V @ 250µA 10.8nC @ 10V 435pF @ 10V 1.7W Surface Mount 6-UDFN Exposed Pad
PMPB20ENZ NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 7.2A (Ta) 19.5 mOhm @ 7A, 10V 2V @ 250µA 10.8nC @ 10V 435pF @ 10V 1.7W Surface Mount 6-UDFN Exposed Pad
NTTFS4840NTWG ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 4.6A (Ta), 26A (Tc) 24 mOhm @ 20A, 10V 3V @ 250µA 10.8nC @ 10V 580pF @ 15V 840mW Surface Mount 8-WDFN Exposed Pad
NTTFS4840NTAG ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 4.6A (Ta), 26A (Tc) 24 mOhm @ 20A, 10V 3V @ 250µA 10.8nC @ 10V 580pF @ 15V 840mW Surface Mount 8-WDFN Exposed Pad