MOSFET N-Channel, Metal Oxide,FET Type
30V,Drain to Source Voltage (Vdss)
8.8A (Ta),Current - Continuous Drain (Id) @ 25°C
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI4892DY-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 8.8A (Ta) 12 mOhm @ 12.4A, 10V 800mV @ 250µA 10.5nC @ 5V - 1.6W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4892DY-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 8.8A (Ta) 12 mOhm @ 12.4A, 10V 800mV @ 250µA 10.5nC @ 5V - 1.6W Surface Mount 8-SOIC (0.154", 3.90mm Width)