| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GA04JT17-247 | GENESIC SEMICONDUCTOR INC | Silicon Carbide, Normally Off | 1700V (1.7kV) | 4A (Tc) (95°C) | 500 mOhm @ 4A, 10V | - | - | - | 91W | Through Hole | TO-247-3 | |
| GA08JT17-247 | GENESIC SEMICONDUCTOR INC | Silicon Carbide, Normally Off | 1700V (1.7kV) | 8A (Tc) (90°C) | 250 mOhm @ 8A | - | - | - | 16W | Through Hole | TO-247-3 | |
| GA16JT17-247 | GENESIC SEMICONDUCTOR INC | Silicon Carbide, Normally Off | 1700V (1.7kV) | 16A (Tc) (90°C) | 110 mOhm @ 16A | - | - | - | 32W | Through Hole | TO-247-3 | |
| IXTT2N170D2 | IXYS CORP | MOSFET N-Channel, Metal Oxide | 1700V (1.7kV) | 2A | 6.5 Ohm @ 1A, 0V | - | 110nC @ 5V | 3650pF @ 25V | 568W | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | |
| IXTH2N170D2 | IXYS CORP | MOSFET N-Channel, Metal Oxide | 1700V (1.7kV) | 2A (Tj) | 6.5 Ohm @ 1A, 0V | - | 110nC @ 5V | 3650pF @ 10V | 568W | Through Hole | TO-247-3 | |
| WPH4003-1E | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 1700V (1.7kV) | 2.5A (Tc) | 10.5 Ohm @ 1.5A, 10V | - | 48nC @ 10V | 850pF @ 30V | 55W | Through Hole | TO-3P-3 Full Pack | |
| C2M1000170D | CREE INC | SiCFET N-Channel, Silicon Carbide | 1700V (1.7kV) | 4.9A (Tc) | 1.1 Ohm @ 2A, 20V | 2.4V @ 100µA | 13nC @ 20V | 191pF @ 1000V | 69W | Through Hole | TO-247-3 |
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