1100V (1.1kV),Drain to Source Voltage (Vdss)
12 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IXFB40N110P IXYS CORP
MOSFET N-Channel, Metal Oxide 1100V (1.1kV) 40A (Tc) 260 mOhm @ 20A, 10V 6.5V @ 1mA 310nC @ 10V 19000pF @ 25V 1250W Through Hole TO-264-3, TO-264AA
IXTH13N110 IXYS CORP
MOSFET N-Channel, Metal Oxide 1100V (1.1kV) 13A (Tc) 920 mOhm @ 500mA, 10V 4.5V @ 250µA 195nC @ 10V 5650pF @ 25V 360W Through Hole TO-247-3
IXTA3N110 IXYS CORP
MOSFET N-Channel, Metal Oxide 1100V (1.1kV) 3A (Tc) 4 Ohm @ 1.5A, 10V 5V @ 250µA 42nC @ 10V 1350pF @ 25V 200W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTP3N110 IXYS CORP
MOSFET N-Channel, Metal Oxide 1100V (1.1kV) 3A (Tc) 4 Ohm @ 1.5A, 10V 5V @ 250µA 42nC @ 10V 1350pF @ 25V 200W Through Hole TO-220-3
IXFX30N110P IXYS CORP
MOSFET N-Channel, Metal Oxide 1100V (1.1kV) 30A (Tc) 360 mOhm @ 15A, 10V 6.5V @ 1mA 235nC @ 10V 13600pF @ 25V 960W Through Hole TO-247-3
IXFK30N110P IXYS CORP
MOSFET N-Channel, Metal Oxide 1100V (1.1kV) 30A (Tc) 360 mOhm @ 15A, 10V 6.5V @ 1mA 235nC @ 10V 13600pF @ 25V 960W Through Hole TO-264-3, TO-264AA
IXFR30N110P IXYS CORP
MOSFET N-Channel, Metal Oxide 1100V (1.1kV) 16A (Tc) 400 mOhm @ 15A, 10V 6.5V @ 1mA 235nC @ 10V 13600pF @ 25V 320W Through Hole -
IXFL40N110P IXYS CORP
MOSFET N-Channel, Metal Oxide 1100V (1.1kV) 21A (Tc) 280 mOhm @ 20A, 10V 6.5V @ 1mA 310nC @ 10V 19pF @ 25V 357W Through Hole -
MMIX1F40N110P IXYS CORP
MOSFET N-Channel, Metal Oxide 1100V (1.1kV) 24A (Tc) 290 mOhm @ 20A, 10V 6.5V @ 1mA 310nC @ 10V 19000pF @ 25V 500W - -
IXFN30N110P IXYS CORP
MOSFET N-Channel, Metal Oxide 1100V (1.1kV) 25A 360 mOhm @ 15A, 10V 6.5V @ 1mA 235nC @ 10V 13600pF @ 25V 695W Chassis Mount SOT-227-4, miniBLOC